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| NPN-Silizium-Fototransistor im SMT-Gehause Silicon NPN Phototransistor in SMT Package Vorlaufige Daten / Preliminary Data 6.2 5.8 3.4 3.0 SFH 3201 0.2 M A A 4.2 3.8 B 0.15 0.13 0...0.1 Active area 0.55 1 2 3 0.5 0.3 6 5 4 0.1 M B 1 2 3 Emitter 4 Collector 5 6 - 0.7 0.4 1.27 spacing 2.45 spacing 2.1 1.7 GEO06982 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 460 nm bis 1080 nm q Hohe Linearitat q SMT-Bauform ohne Basisanschlu, geeignet fur Vapor Phase-Loten, IR-Reflow-Loten (JEDEC level 4) und Wellenloten (JEDEC level 4) q Nur gegurtet lieferbar Anwendungen q Umgebungslicht-Detektor q Lichtschranken fur Gleich- und Wechsel- 460 nm to 1080 nm q High linearity q SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) q Available only on tape and reel Applications q q q q lichtbetrieb q Industrieelektronik q Messen/Steuern/Regeln" Typ Type SFH 3201 Bestellnummer Ordering Code on request Ambient light detector Photointerrupters Industrial electronics For control and drive circuits Gehause Package P-DSO-6 Semiconductor Group 1 1998-04-27 SFH 3201 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Top; Tstg VCE VCE IC ICS VEC Ptot RthJA Wert Value - 40 ... + 85 20 70 50 100 7 120 500 Einheit Unit o C V V mA mA V mW K/W Semiconductor Group 2 1998-04-27 SFH 3201 Kennwerte (TA = 25 oC) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 20 V, E = 0 Symbol Symbol S max Wert Value 850 Einheit Unit nm 460 ... 1080 nm A LxB LxW CCE ICEO 0.55 1x1 60 15 3 ( 200) mm2 mm x mm Grad deg. pF nA Semiconductor Group 3 1998-04-27 SFH 3201 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 1) 1) Symbol Symbol Wert Value -1 -2 -3 Einheit Unit IPCE IPCE tr , tf 63 ... 125 1.65 16 100 ... 200 160 ... 320 2.6 24 4.2 34 A mA s VCEsat 170 ( 250) mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-04-27 SFH 3201 TA = 25 C, = 950 nm Rel.spectral sensitivity Srel = f () 100 OHF02332 Photocurrent IPCE = f (Ee), VCE = 5 V 10 1 mA 1 2 3 OHF00326 Total power dissipation Ptot = f (TA) 140 mW Ptot 120 100 80 60 40 OHF00309 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 pce 10 0 10 -1 10 -2 10 -3 20 10 -4 -3 10 10 -2 mW/cm 2 Ee 10 0 0 0 20 40 60 80 C 100 TA Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Dark current ICEO = f (VCE), E = 0 OHF01524 Dark current ICEO = f (TA), VCE = 10 V, E = 0 OHF02341 PCE 1.6 CEO 10 2 nA CEO 10 2 nA OHF02342 10 1 10 1 10 0 10 0 10 -1 10 -1 10 -2 0 25 50 75 C 100 TA 10 -2 0 10 20 30 40 50 V 70 V CE 0 20 40 60 80 C 100 TA Photocurrent IPCE = f (VCE) pce 3.0 mA 2.5 1.0 mW/cm 2 OHF00327 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz 50 OHF02344 C CE pF 40 2.0 30 1.5 0.5 mW/cm 2 1.0 0.25 mW/cm 2 0.5 0.1 mW/cm 2 0 0 10 20 30 40 50 60 V 70 Vce 20 10 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE Semiconductor Group 5 1998-04-27 |
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